Analysis of Cu(In, Ga)Se2 Efficiency Gap Between Module and Cell

Abstract

Film inhomogeneity of Si and CIGS which plays an important role for solar cell scaling are studied. The inhomogeneity is due to the process variations. The Si and CIGS modules with different key material parameter like the lifetime, doping, and band gap are simulated. The simulation results show that CIGS have larger performance degradation from the variation comparing with the Si case. And this could explain why CIGS solar cell has larger efficiency gap between the module and the small cell.