Microwave Optical Switches Metal–Semiconductor–Metal Schottky based on GaAs

Abstract

Interdigitated metal–semiconductor–metal (MSM) photodetectors have received considerable attention for applications in microwave optical phoswitches. The impulse response of photoswich interdigitated fabricated metal-semiconductor- on GaAs metal non-intentional doped (NID) absorbing layer is investigated. The photodetector MSM is introduced in the microwave lines have active surfaces of 3x3 m2 and electrode spacing of 0.2, 0.3, 0.5 and 1 m.. The photocurrent response was measured after excitation and we found that the screening of the dark electric field and charge accumulation exceedingly modify the drift conditions of the photogenerated electrons and holes in active region of the MSM photoswich.