Measurement of half-bridge parasitic impedances using a flexible test probe

Authors

  • A. Llamazares Department of Electrical Engineering, EINA, Zaragoza University ,María de Luna 3 – Edificio Torres Quevedo – Campus Río Ebro – 50018 Zaragoza (Spain) Author
  • S. Martín-Arroyo Department of Electrical Engineering, EINA, Zaragoza University ,María de Luna 3 – Edificio Torres Quevedo – Campus Río Ebro – 50018 Zaragoza (Spain) Author
  • M. García-Gracia Department of Electrical Engineering, EINA, Zaragoza University ,María de Luna 3 – Edificio Torres Quevedo – Campus Río Ebro – 50018 Zaragoza (Spain) Author

DOI:

https://doi.org/10.52152/4103

Abstract

The use of SiC MOSFETs in power applications allows to increase power density and efficiency because switching frequencies are higher. However, parasitic impedances are responsible for oscillations that can have negative effects.

In this paper we analyse the parasitic impedances of a half-bridge formed by a busbar PCB laminated with SiC MOSFETs. Using the distributed parameter approach, we have developed a procedure to characterize the impedance of the switching current loop responsible for the oscillations in the switching. According to the above, the conclusions obtained will be presented.

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Published

2024-10-30

Issue

Vol. 22 No. 2 (2024)

Section

Articles