Sputtered Indium Tin Oxide thin films deposited on glass substrate for photovoltaic application

Authors

  • L. Kerkache Author
  • A. Layadi Author
  • F.Hadjersi Author
  • E. Dogheche Author
  • A. Gokarna Author
  • A. Stolz Author
  • M. Halbwax Author
  • J.P. Vilcot Author
  • D.Decoster Author
  • B. El Zein Author
  • S. S. Habib Author

DOI:

https://doi.org/10.24084/repqj08.720

Abstract

Polycrystalline indium tin oxide (ITO) films were

prepared on glass substrates by radio frequency (RF) sputtering

system from a high density target (90wt. In2O3 and 10 wt.

%SnO2 ). X-ray diffraction (XRD) and Scanning Electron

Microscopy (SEM) experiments were performed to study the

structure and the surface morphology of these samples. The

results show that the as-deposited ITO thin films deposited on

glass have a <100> texture, as the film grows the preferred

orientation changes from <100> to <111>. The lattice

parameters are found to be larger than the bulk value, indicating

that the samples are under a tensile stress. The grain size

increases with increasing thickness. SEM images show a dense

granular structure with grains having different shapes and sizes.

After deposition, the samples have been annealed in air at

temperature T around 400°C for 1 hour. We found that the

<111> texture becomes stronger after the annealing treatment.

A large increase in the grain size after annealing is also

observed. The lattice constant decreases with T to become

closer to the bulk value, i.e. annealing seems to relieve the

stress present in the as-deposited films. The optical transmisión

is greater than 80 % in the visible region.The refractive index n

values are found to be in the 1.7-1.9 range. The energy gap

values are between 3.58 and 3.88 eV .

Author Biographies

  • L. Kerkache

    Département de Physique, Faculté des Sciences, Université Ferhat Abbas Sétif 19000, Algérie.

    Phone/Fax number:+00 213 36 93 79 43, e-mail: kerkachelaid@yahoo.fr

  • A. Layadi

    Département de Physique, Faculté des Sciences, Université Ferhat Abbas Sétif 19000, Algérie.

    Phone/Fax number:+00 213 36 93 79 43

  • F.Hadjersi

    Département de Physique, Faculté des Sciences, Université Ferhat Abbas Sétif 19000, Algérie.

    Phone/Fax number:+00 213 36 93 79 43

  • E. Dogheche

    Institut d’Electronique Microélectronique et Nanotechnologie, IEMN-CNRS UMR 8520 Université de Valenciennes et

    du Hainaut Cambrésis, Cité scientifique F- 59000 Lille, France.

  • A. Gokarna

    Institut d’Electronique Microélectronique et Nanotechnologie, IEMN-CNRS UMR 8520 Université de Valenciennes et du Hainaut Cambrésis, Cité scientifique F- 59000 Lille, France.

  • A. Stolz

    Institut d’Electronique Microélectronique et Nanotechnologie, IEMN-CNRS UMR 8520 Université de Valenciennes et

    du Hainaut Cambrésis, Cité scientifique F- 59000 Lille, France.

  • M. Halbwax

     Institut d’Electronique Microélectronique et Nanotechnologie, IEMN-CNRS UMR 8520 Université de Valenciennes et

    du Hainaut Cambrésis, Cité scientifique F- 59000 Lille, France.

  • J.P. Vilcot

     Institut d’Electronique Microélectronique et Nanotechnologie, IEMN-CNRS UMR 8520 Université de Valenciennes et

    du Hainaut Cambrésis, Cité scientifique F- 59000 Lille, France.

  • D.Decoster

    Institut d’Electronique Microélectronique et Nanotechnologie, IEMN-CNRS UMR 8520 Université de Valenciennes et

    du Hainaut Cambrésis, Cité scientifique F- 59000 Lille, France

  • B. El Zein

    Center of Nanotechnology, King Abdul Aziz University, P.O. Box 80204, Jeddah 21589, Saudi Arabia

  • S. S. Habib

    Center of Nanotechnology, King Abdul Aziz University, P.O. Box 80204, Jeddah 21589, Saudi Arabia

Downloads

Published

2024-01-24

Issue

Section

Articles