A 380 V High Efficiency and High Power Density Switched-Capacitor Power Converter using Wide Band Gap Semiconductors

Authors

  • L. Fan Author
  • A. Knott Author
  • I. Jørgensen Author

DOI:

https://doi.org/10.24084/repqj16.422

Keywords:

Switched capacitor circuits, DC-DC power converters, Gallium nitride, Silicon carbide, Wide band gap semiconductors

Abstract

State-of-the-art switched-capacitor DC-DC power converters mainly focus on low voltage and/or high power applications. However, at high voltage and low power levels, new designs are anticipated to emerge and a power converter that has both high efficiency and high power density is highly desirable. This paper presents such a high voltage low power switched-capacitor DC-DC converter with an input voltage up to 380 V (compatible with rectified European mains) and an output power experimentally validated up to 21.3 W. The wide band gap semiconductor devices of GaN switches and SiC diodes are combined to compose the proposed power stage. Their switching and loss characteristics are analyzed with transient waveforms and thermal images. Different isolated driving circuits are compared and a compact isolated half bridge driving circuit is proposed. The full-load efficiencies of 98.3% and 97.6% are achieved for the power stage and the complete power converter, without heatsink or airflow. The corresponding power densities are 7.9 W/cm3 and 2.7 W/cm3, based on boxed volumes, respectively.

Author Biographies

  • L. Fan

    Department of Electrical Engineering 
    Technical University of Denmark 
    Richard Petersens Plads 325, 2800 Kgs. Lyngby (Denmark) 

  • A. Knott

    Department of Electrical Engineering 
    Technical University of Denmark 
    Richard Petersens Plads 325, 2800 Kgs. Lyngby (Denmark)

  • I. Jørgensen

    Department of Electrical Engineering 
    Technical University of Denmark 
    Richard Petersens Plads 325, 2800 Kgs. Lyngby (Denmark)

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Published

2024-01-24

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Section

Articles