Comparison of different solutions for blocking diode applications in a photovoltaic panel under varying ambient conditions

Authors

  • H.C. Neitzert Author
  • A. Astone Author

DOI:

https://doi.org/10.24084/repqj08.538

Abstract

We characterized a crystalline silicon based

minimodule under varying ambient conditions, developed a

PSPICE model for this panel, including temperature and

irradiation dependence and applied this model to the simulation

of the impact of a blocking diode under different ambient

conditions. Different blocking diodes were examined, like

germanium and silicon homojunction diodes and silicon

Schottky diodes and compared to “intelligent” diodes,

consisting of operational amplifiers with MOSFET switches.

We calculated a strongly reduced power loss in a panel

integrating the “intelligent” blocking diodes even when

compared to silicon Schottky diodes with a rather low voltage

drop.

Author Biographies

  • H.C. Neitzert

    Department of Electrical Engineering

    DIIIE, Salerno University

    Via Ponte Don Melillo 1, 84084 Fisciano (SA) (Italy)

    Phone number:+0039 089 964304, fax number:+0039 089 964218, e-mail: neitzert@unisa.it

  • A. Astone

    present address:

    Telefon Italia Mobile (TIM)

    Trieste (Italy)

    Phone number:+0039 335 6339639, e-mail: aldo.astone@gmail.com

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Published

2024-01-24

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Section

Articles