Low Bandgap GaInAsSbP Pentanary Thermophotovoltaic cells

Authors

  • P. J. Carrington Author
  • A. Krier Author
  • K. J. Cheetham Author
  • N. B. Cook Author
  • M. Yin Author

DOI:

https://doi.org/10.24084/repqj08.354

Abstract

The    liquid    phase    epitaxial    growth    of    pentanary GaInAsSbP   lattice    matched   onto   GaSb   and   InAs substrates   is   reported   for   use   in   narrow   band   gap thermophotovoltaic   cells.   The   epitaxial   layers   were characterized  and  exhibited  intense  photoluminescence up to room temperature. Prototype thermophotovoltaic p-i-n  diodes  were  fabricated  which  were  sensitive  in  the mid-infrared spectral range having cut-off wavelengths in the range 4.0 - 4.5 μ m at room temperature.  

Author Biographies

  • P. J. Carrington

    Physics Department, Lancaster University, Lancaster, LA1 4YB, UK

    Phone: 01524 594750, e-mail: p.carrington@lancaster.ac.uk

  • A. Krier

     

    Physics Department, Lancaster University, Lancaster, LA1 4YB, UK

    Phone: 01524 594750

  • K. J. Cheetham

    Physics Department, Lancaster University, Lancaster, LA1 4YB, UK

    Phone: 01524 594750,

  • N. B. Cook

     

    Physics Department, Lancaster University, Lancaster, LA1 4YB, UK

    Phone: 01524 594750

  • M. Yin

    Physics Department, Lancaster University, Lancaster, LA1 4YB, UK

    Phone: 01524 594750

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Published

2024-01-24

Issue

Vol. 8 No. 1 (2010)

Section

Articles