Insulated Gate Bipolar Transistor Failure Analysis in Overvoltage Condition

Authors

  • B.C. KOK Department of Electrical Power Engineering, Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia Author
  • M.S. Looi Department of Electrical Power Engineering, Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia Author
  • H.H. Goh Department of Electrical Power Engineering, Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia Author

DOI:

https://doi.org/10.24084/repqj10.392

Keywords:

Insulated Gate Bipolar Transistor, Switching Losses, Junction Temperature, Boost Power Factor Correction

Abstract

This paper presents the Insulated Gate Bipolar Transistor (IGBT) device failure analysis in overvoltage condition, which is a normal phenomenon occurring in a poor power quality utility system. In most of the IGBT gate drive design, conventionally it embeds the overvoltage protection circuit, however, the problem of short-circuit would still happen. Therefore, a detailed study had been carried out, where the overvoltage condition is being simulated to a boost Power Factor Correction (PFC) circuit implementing the IGBT as a switching device. A set of equations is derived for calculating the maximum junction temperature of an IGBT using the device switching characteristics during overvoltage condition. This approach can be used to determine the heat generation of IGBT device as well as identifying the root-cause of the short-circuit failure of hard switching design scheme during overvoltage condition.

Downloads

Published

2024-01-16

Issue

Vol. 10 No. 4 (2012)

Section

Articles